? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25c to 175c 100 v v dgr t j = 25c to 175c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25c 170 a i l(rms) external lead current limit 160 a i dm t c = 25c, pulse width limited by t jm 350 a i a t c = 25c 60 a e as t c = 25c 2 j dv/dt i s i dm , v dd v dss , t j 175c 10 v/ns p d t c = 25c 715 w t j -55 to +175 c t jm +175 c t stg -55 to +175 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264 & to-3p) 1.13/10 nm/lb.in. weight to-268 4.0 g to-3p 5.5 g to-264 10.0 g n-channel enhancement mode avalanche rated polar tm power mosfet IXTT170N10P ixtq170n10p ixtk170n10p ds99176f(01/10) v dss = 100v i d25 = 170a r ds(on) 9m g = gate d = drain s = source tab = drain to-3p (ixtq) tab d g s to-264 (ixtk) s g d tab to-268 (ixtt) g s tab features z international standard packages z fast intrinsic rectifier z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 150c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 9 m v gs = 15v, i d = 350a 7 m
ixys reserves the right to change limits, test conditions, and dimensions. IXTT170N10P ixtq170n10p ixtk170n10p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 50 72 s c iss 6000 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 2340 pf c rss 730 pf t d(on) 35 ns t r 50 ns t d(off) 90 ns t f 33 ns q g(on) 198 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 39 nc q gd 107 nc r thjc 0.21 c/w r thcs (to-3p) 0.25 c/w (to-264) 0.15 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 60a r g = 3.3 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 170 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 120 ns q rm 2.0 c i f = 25a, -di/dt = 100a/ s, v r = 50v, v gs = 0v to-268 (ixtt) outline to-3p (ixtq) outline to-264 aa ( ixtk) outline dim. millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 back side 1 = gate 2 = drain 3 = source tab = drain
? 2010 ixys corporation, all rights reserved IXTT170N10P ixtq170n10p ixtk170n10p fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 6v 5v 7v 8v 9v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds - volts i d - amperes v gs = 10v 9v 5v 8v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 180 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ds - volts i d - amperes v gs = 10v 6v 5v 8v 9v 7v fig. 4. r ds(on) normalized to i d = 85a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 170a i d = 85a fig. 5. r ds(on) normalized to i d = 85a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTT170N10P ixtq170n10p ixtk170n10p fig. 7. input admittance 0 40 80 120 160 200 240 280 320 345678910 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 20 40 60 80 100 120 0 40 80 120 160 200 240 280 320 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 50v i d = 85a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 1ms 100s r ds(on) limit 10ms dc
? 2010 ixys corporation, all rights reserved ixys ref: t_170n10p(8s)01-07-10-c IXTT170N10P ixtq170n10p ixtk170n10p fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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